In both GGA and MGGA calculations, the Brillouin zone of CdSe NW is sampled using a (1 × 1 × 21) Monkhorst-Pack special k-point mesh, which yields well-converged results. Troullier–Martins pseudopotentials were used, and the relativistic core corrections were also included. The electronic and optical properties were calculated via Meta-GGA (MGGA) method with Tran and Blaha (TB09) functional within the ATK package. The convergence criteria were set to be 1 × 10 −5 eV/supercell for energy and 0.05 eV/Å for forces. Perdew–Burke–Ernzerhof exchange-correlation functional and L-BFGS optimizer were used. The nanowire structures were optimized using Atomistix Toolkit (ATK) package under generalized gradient approximation (GGA). Thus, in order to achieve a better understanding of the stain effect on CdSe NWs, we have carried out DFT calculations to investigate the effect of strain on the band structures and optical properties of CdSe NWs of various diameters. Previous studies have shown that first-principles DFT calculations well performs when it comes to the simulations of CdSe nano-systems. However, very limited information is available on how strain affects the electronic and optical properties of CdSe NWs. The studies of Lu group showed that the applied strain also affects the dielectric function peaks of ZnO nanowires. found that GaAs nanowires undergo a direct–indirect bandgap transition under compressive strain. Interesting results were published to enrich our understanding. Indeed, strain effect has been widely studied on many nano-systems such as GaAs and ZnO. Therefore, it is essential to also study the influence of strain on various structural, electronic, and optical properties of NWs. However, semiconductor NWs, as basic units of microelectronic and optoelectronic nanodevices, often work under the existence of strain. Since then, many efforts have been put into the study of the electronic, thermal, and optical properties of CdSe NWs as well. Most WZ wires grew along crystallographic direction. Depending on the synthesis conditions, researchers were able to get two structures of CdSe nanowires: the zinc blende (ZB) structure and wurtzite (WZ) structure. Experimentally, CdSe NWs have been successfully synthesized by various methods, such as γ-irradiation, electrochemistry, and solution–liquid–solid (SLS). Especially CdSe NWs has been shown as good field-effect transistor similar to carbon nanotube bundles. Among all CdSe nanostructures, CdSe NWs are by far the most attractive to researchers and scientists due to their unique opto-electrical properties, high length-diameter aspect ratio, and high surface-to-volume ratio. The structural, electronic, and optical properties of various CdSe nanostructures were also widely studied. Recently, a great variety of CdSe nanostructures including nanowires (NWs), nanospheres, nanorods, nanosheets, and nanocrystals have been successfully synthesized. The department is very active in teaching and research in the areas of Communications and Signal Processing, Control and Computing, Power Electronics and Power Systems, Microelectronics and VLSI design, and Electronic Systems.Cadmium selenide (CdSe) nanostructures have attracted much attention due to their potential applications in micro- and nano-optoelectronics. The Department of Electrical Engineering (EE) is one of the major Departments of IIT Bombay since its inception in 1958. Seminar and Events direct you to the list of recently held seminars and events respectively at Electrical Department, IITB. Timetable directs you the course timetable and exam timetable.
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IITB Calendar directs you to the IITB academic calendar containing information about the academic activities such as orientation and registration of the new and already enrolled students, semester exams, vacation, dessertation and annual progress seminar details and details of other important events of the ongoing year. Many of whom are well-known and established in their careers across the world. The department, through the Electrical Engineering Students Association EESA, maintains regular contact with its alumni, In addition, many prominent researchers/teachers across the world hold visiting appointments in the department. The Electrical Engineering Department is one of the largest departments in the institute and also in the country.Ĭurrently there are about 1100 students enrolled in various academic programs, about 200 project employees in various sponsored projects,Ībout 30 technical staff, 30 administrative staff and about 60 faculty members. The research is published in leading international journals and conferences. Much of this research is funded by national and international funding agencies, both government and corporate. The department is actively engaged in research areas ranging from practical implementation to theoretical investigations.